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| VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136175 MHz band. PACKAGE STYLE .500 6L FLG C A 3 D 1 2x O N FU LL R FEATURES: * 175 MHz 12.5 V * Internal Input Matching Network * PG = 6.0 dB at 100 W/175 MHz * OmnigoldTM Metalization System * Common Emitter configuration B G 2 .725/18,42 F 4 E K H D IM A M IN IM U M inches / m m M L J I M A XIM U M inches / m m .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG JC 20 A 36 V 18 V 36 V 4.0 V 270 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.65 C/W B C D E F G H I J K L M N .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 1 = Collecttor 2 = Base 3&4 = Emitter ORDER CODE: ASI10719 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICES TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 12.5 V MINIMUM TYPICAL MAXIMUM 18 36 36 4.0 15 UNITS V V V V mA REV. C 1/2 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. VHB100-12 ERROR! REFERENCE SOURCE NOT FOUND. CHARACTERISTICS SYMBOL hFE COB PG C VCE = 5.0 V TC = 25 C NONETEST CONDITIONS IC = 5.0 A f = 1.0 MHz POUT = 100 W f = 175 MHz MINIMUM TYPICAL MAXIMUM 10 100 390 6.0 60 UNITS --pF dB % VCB = 12.5 V VCC = 12.5 V PIN = 25 W IMPEDANCE DATA FREQ 175 MHz ZIN () 1.05 - j0.9 ZCL () 0.5 - j1.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2 |
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